Vertical metal-semiconductor-metal deep UV photodetectors based on hexagonal boron nitride nanosheets prepared by laser plasma deposition

We report on the synthesis and characterization of hexagonal boron nitride nanosheets (BNNSs) for deep ultraviolet (DUV) photodetector applications. The vertical structure metal-semiconductor-metal (MSM) solar-blind DUV photodetector based on BNNSs has been fabricated and tested. The detector performance is stable under UV radiation at temperatures exceeding 100°C. The bandgap engineered material has a cutoff wavelength of approximately 250 nm and does not respond to any longer wavelength or visible light. The photodetector demonstrates the advantages of hexagonal BNNSs as a wide band gap material for DUV detection in harsh environments.