Synthesis, structural, and electrical characterization of RuO2 sol–gel spin-coating nano-films

In this work a series of RuO2 thin films were synthesized through sol–gel spin coating processes and their structural and electrical properties are studied. The (1 1 0), (1 0 1), (2 0 0), and (2 1 1) characteristic peaks of RuO2 phase are identified from the annealed RuO2 films X-ray diffraction profiles. Through the Atomic Force Microscopy, the surface roughness values of the films evaluated as 1.2 nm, and 0.9 nm for 0.5, and 1.0 mmol RuO2 films, respectively. With Ru molar ratio increment the optical transparency of the synthesized films decreases in the UV–Vis-IR range. The P-type conductivity of RuO2 film is confirmed by Hall Effect measurement and the resistivity of 1.0 mmol RuO2 film annealed at 600 °C acquired by Hall measurement was 2.9 × 10−4 Ω cm. The synthesized RuO2 nano-thin films characterization demonstrates that an optically transparent conductive material can be reliably and efficiently created using simple sol–gel spin-coating methods.