The study of electrical properties of β-Ag2Te and β-Ag2Se has been extended to 4.2°K. The former compound was zone refined without decomposition. Both n- and p-type samples of β-Ag2Te were studied; all samples of β-Ag2Se prepared were n type to 4.2°K. Neither semiconductor showed any indication of extrinsic carrier freeze-out or of impurity banding. Study of oxygen as a possible acceptor in β-Ag2Te showed no significant effect; a selenium-doped sample of β-Ag2Se was n-type to 4.2°K.
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Dalven et al. (1967) studied this question.
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