Experimental study demonstrates continuously adjustable, non-volatile capacitance in a ferroelectric metal-insulator-semiconductor device, highlighting applications in memory and analog circuit...
In this letter, we proposed and experimentally demonstrated a metal-insulator-semiconductor (MIS) ferroelectric capacitor with non-volatile programmable capacitance. By switching the polarization of the Al-doped HfO 2 ferroelectric insulator with the external electric field, the depletion width of the semiconductor can be modulated, leading to the continuously adjustable capacitance of the device. Due to the non-volatility of ferroelectricity, the programmed capacitance is stable without the constant DC bias. We also proposed some potential applications of the capacitor in the data storage and circuit design.
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Zhou et al. (2020) studied this question.
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