Complementary resistive switching (CRS) behavior in a flexible plastic substrate was studied for the first time in this letter. CRS behaviors in Al/Ni/NiAlOx/Al 2 O 3-x /ITO device were demonstrated with excellent performance. A high-resistance ON/OFF ratio (~10 3 ), 50-ms switch speed was successfully obtained. In addition, the mechanism of CRS behavior was interpreted by the redistribution of oxygen vacancies in NiAlO x /Al 2 O 3-x stack layers. Such a CRS style flexible RRAM device is a possible solution for future integrated circuits application.
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Dai et al. (2014) studied this question.
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