Demonstrates a new memristor system improving image processing accuracy, suggesting advancements in edge intelligence applications.
Reservoir computing (RC) system based on photoelectronic memristors has attracted increasing attention because of its inherently nonlinearity, history-dependent dynamics, and fading memory for real-time processing complex task. However, relying on its natural relaxation process leads to the RC system with low efficiency. Here, we propose an Au/CuI/TiOx/FTO heterojunction optoelectronic synergistic memristor and demonstrate its application as a single-node physical reservoir computing (PRC) system. The device synergistically integrates oxygen-vacancy migration in TiOx with the photosensitivity of CuI, enabling precise. This approach generates rich, high-dimensional reservoir states with enhanced separability. The memristor exhibits diverse synaptic plasticity and supports over 32 distinct conductance states (>5-bits precision). Furthermore, a predictive model was established to capture device dynamics, achieving an accuracy of 82.8% for the standard RC model, while the accuracy of the heterojunction memristor-assisted RC model increased to 97.26%. The research demonstrates that heterojunction optoelectronic collaborative memristors exhibit significant potential in efficient temporal encoding and high-precision single-node PRC, providing a promising solution for edge intelligence and low-power neuromorphic hardware.
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Fan et al. (2026) studied this question.
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