Emerging circuit techniques to utilize wide-bandgap semiconductors in compact, lightweight, and efficient power converters

Wide-bandgap power devices enable dramatic improvement in switching speed, on-state resistance, and operating temperature. However, to fully utilize the increased figure-of-merit (FOM) of these new silicon carbide (SiC) and gallium nitride (GaN) devices, the power electronics designer must also consider new circuit techniques. In particular, the high speed switch transition can give rise to undesirable ringing, voltage overshoot, and electromagnetic interference (EMI), if not managed properly. Here, we outline some challenges associated with power electronics design with wide-bandgap power semiconductors, and present solutions that help unleash the true potential of these groundbreaking devices.