The rapid maturation of GaN power transistors continues to enable new capabilities in high frequency power conversion. In this paper we will evaluate one of the latest technological advancements in eGaN ® FETs, monolithic integration. The benefits of monolithic integration for GaN power transistors with regards to parasitic reduction, die size optimization, and thermal performance will be discussed. Experimental results for a 12 V IN to 1 V OUT buck converter operating at a switching frequency of 1 MHz and up to 40 A of output current will be demonstrated with 30 V eGaN monolithic half bridge (HB) ICs. For an 80 V eGaN monolithic HB IC, 48 V IN to 1 V OUT and 1.8 V OUT point-of-load (POL) converters will be demonstrated at switching frequencies up to 500 kHz and output currents up to 30 A.
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Reusch et al. (2015) studied this question.