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January 1, 2023Energy & Environmental Science

Engineering an atomic-level crystal lattice and electronic band structure for an extraordinarily high average thermoelectric figure of merit in n-type PbSe

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Authors

BGBangzhi GeNorthwestern Polytechnical UniversityHLHyungseok LeeHanzhong UniversityJIJino ImKookmin University

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Implication

Experimental study demonstrates record-high average thermoelectric figure of merit in n-type PbSe via multiscale defect engineering, suggesting superior efficiency for power generation.

Key Points

  • To enhance the average thermoelectric figure of merit in polycrystalline n-type PbSe by tailoring its atomic-level crystal lattice and electronic band structure.
  • Synthesized a modified n-type composition formulated as CuxPb(Se0.8Te0.2)0.95.
  • Engineered multiscale defect structures by incorporating interstitial Cu, off-centered Pb and Se atoms, and anion vacancies.
  • Achieved a record-high average thermoelectric figure of merit (ZT) among all reported polycrystalline n-type thermoelectric materials.
  • Enhanced overall performance due to a substantially elevated thermoelectric power factor (PF) driven by multiscale defect structures.

Cite This Study

Ge et al. (2023) studied this question.

synapsesocial.com/papers/69df3f6a6324afb55d591c19https://doi.org/10.1039/d3ee01226c
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