Chemical Vapor Deposition Growth of High Crystallinity Sb₂Se₃ Nanowire with Strong Anisotropy for Near‐Infrared Photodetectors

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Low-dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb₂ Se₃ nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb₂ Se₃ NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle-resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb₂ Se₃ NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb₂ Se₃ NW exhibit a wide spectral photoresponse range from visible to NIR (400-900 nm). Owing to the high crystallinity of Sb₂ Se₃ NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W⁻¹ , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb₂ Se₃ NW, the device exhibits polarization-dependent photoresponse. The high crystallinity and superior anisotropy of Sb₂ Se₃ NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.