Ultrahigh Responsivity of Ternary Sb–Bi–Se Nanowire Photodetectors

High‐quality single‐crystalline ternary (Sb 1‐ x Bi x ) 2 Se 3 nanowires (NWs) ( x = 0–0.88) are synthesized by chemical vapor deposition. Nanowires with x from 0 to 0.75 are indexed as an orthorhombic structure. With increasing Bi incorporation ratio, (Sb 1‐ x Bi x ) 2 Se 3 NWs exhibit remarkable photoresponsivities, which originate from growing surface Se vacancies and augmented oxygen chemisorptions. Notably, spectra responsivity and external quantum efficiency of an (Sb 0.44 Bi 0.56 ) 2 Se 3 NW photodetector reach as high as ≈8261.4 A/W and ≈1.6 × 10 6 %, respectively. Those excellent performances unambiguously demonstrate that Sb–Bi–Se NWs are promising for the utilizations of high‐sensitivity and high‐speed photodetectors and photoelectronic switches.