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Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO3 junctions. We clarify the microscopic mechanisms by which the interface layer controls the resistive switching. We show that appropriate interface processing can eliminate this contribution. These findings are an important step towards engineering more reliable resistive switching devices.
Mikheev et al. (Mon,) studied this question.
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