Neural network electrothermal modeling approach for microwave active devices

This article presents an artificial neural network (ANN) approaches for small- and large-signal modeling of active devices. The small-signal characteristics were modeled by S-parameters based feedforward NN models. The models have been implemented to simulate the bias, frequency and temperature dependence of measured S-parameters. Feedback NN based large-signal model was developed and implemented to simulate the drain current and its inherent thermal effect due to self-heating and ambient temperature. Both small- and large-signal models have been validated by measurements for 100-μm and 1-mm GaN high electron mobility transistors and very good agreement was obtained.