Spectral investigation of carrier recombination processes in ZnO nanorods at high temperatures

The mechanism of near-band-edge (NBE) emission from crystalline ZnO (c-ZnO) nanorods grown on c-Si by a catalyst-assisted vapor-liquid-solid method has been investigated by performing temperature-, power-, and time-dependent photoluminescence (PL) measurements at a temperature (T) range of 143–503K. In contrast to previous reports, we find that the NBE PL is primarily associated with free exciton emission, whereas the contribution of band-to-band and free-to-bound radiative recombinations remains negligible up to the highest T studied. A spectral evolution of the NBE band with T was further analyzed within the framework of a three-parameter model, proposed recently, with the results presented and discussed. Finally, the ratio of excitonic-to-defect luminescence intensity has been observed to change nonmonotonically with T, which is explained based on the difference in the quenching mechanisms of exciton and defect PL.