Room temperature buried molecular engineering boosts the photovoltaic performance of wide-bandgap and all-perovskite tandems

Key Points

• The aim is to improve the efficiency of all-perovskite tandem solar cells using a buried interface modifier.
• Utilized GBAM as a buried interface modifier at room temperature.
• Performed co-annealing of GBAM with the perovskite layer.
• Optimized the bottom interface of the wide-bandgap perovskite.
• Achieved a photovoltaic performance of 29.07% for 2-terminal perovskite-perovskite tandem cells.