Guest Editorial: Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition

Key Points

• The aim is to showcase the developments in III-nitride semiconductors and correlated wide bandgap materials since the last edition.
• Review of recent literature
• Analysis of material properties
• Discussion of device performance
• Identification of key advancements in material fabrication techniques
• Highlighting improvements in device efficiency and performance
• Recognition of challenges in commercialization of new materials