Thermal Atomic Layer Etching of Copper via Sequential Chlorination and Volatility-Controlled Hydration

Jeongbin Lee; Dongjun Lee; Jiwoo Oh; Jung‐Tae Kim; Jieun Oh; Chang Mo Yoon; Woo-Hee Kim

doi:10.1039/d6mh00227g

January 1, 2026Materials Horizons

Thermal Atomic Layer Etching of Copper via Sequential Chlorination and Volatility-Controlled Hydration

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Key Points

The research aims to enhance the thermal atomic layer etching of copper by addressing the volatility constraints of metal halides.
Utilized a sequential chlorination process to modify copper surfaces.
Implemented a volatility-controlled hydration strategy to facilitate etching.
Examined the effects on scalability and temperature flexibility in dry etching.
Achieved improved etching rates compared to conventional methods.
Demonstrated enhanced selectivity and scalability in the copper etching process.
Found that modified processes maintain effectiveness under lower temperature conditions.

Implication

Demonstrates effective etching of copper, suggesting improved scalability and control in dry etching processes.

Abstract

Thermal atomic layer etching (ALE) of metals is fundamentally constrained by the low volatility of metal halides, which has limited the scalability, selectivity, and temperature flexibility of dry etching processes....

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Cite This Study

Lee et al. (2026) studied this question.

synapsesocial.com/papers/69e865fd6e0dea528ddea743 https://doi.org/10.1039/d6mh00227g

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Thermal Atomic Layer Etching of Copper via Sequential Chlorination and Volatility-Controlled Hydration

Key Points

Implication

Abstract

Discussion

Cite This Study

Thermal Atomic Layer Etching of Copper via Sequential Chlorination and Volatility-Controlled Hydration

Key Points

Implication

Abstract

Discussion

Cite This Study

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