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We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.
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Barik et al. (2008) studied this question.
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