Melt instabilities on semiconductor surfaces induced by laser radiation

Consider the peculiarities of interaction between a light flux and semiconductors at laser pulses of duration > 10 -4 sec and at radiation power densities < 10 5 W/m 2 . With such parameters of laser pulses, the concentration of photoinducted charge carries in the semiconductor of Siand Ge-type does not exceed 10 18 m -3 and electron-hole plasma is nondegenerate. Since the relaxation time for the energy of inducted electron-hole pairs is equal approximately to 10 -12 sec, the electron-hole plasma can be considered as thermalized with a crystal lattice, and both the heat conduction and heat capacity of electrons and