The aim is to explore how heating rates affect defect formation in BiVO4 thin films to enhance their performance in photoelectrochemical water splitting.
Controlled heating rates applied to BiVO4 thin films during synthesis.
Characterization of defect properties and bandgap measurements analyzed post-synthesis.
Induced oxygen vacancies leading to narrower bandgap in BiVO4.
Suppression of recombination events through the formation of shallow donor states.
Abstract
Rapid nucleation-induced oxygen vacancy formation in BiVO 4 : bandgap narrowing and suppressed recombination via shallow donor states.