Heating-rate controlled defect engineering in BiVO ₄ thin films for enhanced photoelectrochemical water splitting

Rafiqat Ul Rasool; Syed Bilal Ahmed; Ruiqin Zhang

doi:10.1039/d5ta03464g

January 1, 2026Journal of Materials Chemistry AOpen Access

Heating-rate controlled defect engineering in BiVO ₄ thin films for enhanced photoelectrochemical water splitting

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Key Points

The aim is to explore how heating rates affect defect formation in BiVO4 thin films to enhance their performance in photoelectrochemical water splitting.
Controlled heating rates applied to BiVO4 thin films during synthesis.
Characterization of defect properties and bandgap measurements analyzed post-synthesis.
Induced oxygen vacancies leading to narrower bandgap in BiVO4.
Suppression of recombination events through the formation of shallow donor states.

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Implication

This investigation uncovers how heating rates affect defect engineering for improved water splitting in BiVO4 films, suggesting a path to better energy solutions.

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Rasool et al. (2026) studied this question.

synapsesocial.com/papers/69eb0a66553a5433e34b46f3 https://doi.org/10.1039/d5ta03464g

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Heating-rate controlled defect engineering in BiVO ₄ thin films for enhanced photoelectrochemical water splitting

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

Heating-rate controlled defect engineering in BiVO ₄ thin films for enhanced photoelectrochemical water splitting

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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