Demonstrates dual-functional optoelectronic performance in Rb2AgI3 single-crystals, implying advances in sensor technology.
Lead‐free ultrawide‐bandgap semiconductors are crucial for next‐generation optoelectronics, yet achieving materials that concurrently enable polarization‐resolved ultraviolet detection and high‐energy radiation sensing remains a grand challenge. Here, we report the synthesis of high‐quality Rb 2 AgI 3 perovskite single‐crystals via a customized chemical vapor deposition method. This material uniquely integrates an ultrawide bandgap (≈4.03 eV), high‐Z constituents for efficient X‐ray attenuation, and a pronounced anisotropic structure. The resulting photodetector exhibits exceptional dual‐functional performance. For ultraviolet‐B detection, it achieves a high responsivity (0.29 A/W), ultrafast speed (42.4/54 µs). Critically, the detector exhibits unprecedented wavelength‐switchable polarization sensitivity, with a degree of linear polarization (DLP) reversing from −0.68 at 295 nm to 0.72 at 305 nm, a first for all‐inorganic perovskites. This phenomenon is harnessed for proof‐of‐concept demonstrations in dual‐wavelength information encoding and image contrast enhancement using a convolutional neural network (Recognition accuracy >97%). Concurrently, the device serves as a high‐sensitivity X‐ray detector, demonstrating a superior sensitivity of 5.3 × 10 4 µC Gy air −1 cm −2 , an ultralow detection limit of 27 nGy air s −1 , and exceptional operational stability, validated by high‐resolution biological imaging. This work establishes Rb 2 AgI 3 as a versatile, high‐stability material platform, fundamentally redefining the frontiers of multifunctional optoelectronics for next‐generation high‐energy radiation sensing and polarization‐resolved optoelectronics.
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Zhai et al. (2026) studied this question.
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