Investigates gain characteristics in AlGaN quantum wells, suggesting improved laser performance.
We demonstrate a novel band broadening model for the effects of alloy fluctuation on stimulated emission in aluminum gallium nitride (AlGaN) quantum wells (QWs). This model is used to study UV-C laser diode designs for different QW widths 3, 4.5, and 9 nm and varying Al mole fractions. We derive optimal parameters for target wavelengths of 270 and 240 nm. Using the 270 nm design as a case study, we analyze the impact of inhomogeneous broadening on the gain characteristic.
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Kölle et al. (2026) studied this question.
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