Arsenic‐free ovonic threshold switch (OTS) materials are important for enabling sustainable selector devices in high‐density crossbar memory arrays. Guided by ab initio design, we investigate Si‐doped GeS 2 as a promising candidate, offering improved thermal stability and reduced leakage compared to alternative arsenic‐free materials. Thin films with up to 10% Si content were deposited by cosputtering and demonstrated thermal stability above 500°C. Device electrical characterization revealed good I OFF performance comparable to reference SiGeAsSe devices. These results position Si‐doped GeS 2 as a viable candidate for environmentally friendly, arsenic‐free OTS selectors, with further optimization needed to address endurance limitations.
Garbin et al. (Wed,) studied this question.
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