New method investigates electrostatic fields in thin reverse-biased p-n junctions, suggesting improved imaging techniques.
A new method has been devised for investigation by TEM of th electrostatic microfield associated with reverse biase p-n junctions. By means of electron holography and optical inteferometry it is possible to obtain on the reconstructed images two-dimensional representations of the projected potential distribution inside and outside the specimen
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Frabboni et al. (1985) studied this question.
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