Mutually coupled body bias low noise amplifier using output transformer matching for 5G communication

This manuscript presents the realization of low noise amplifier (LNA) for the sub 6 GHz applications having frequency range of 5.7 to 7 GHz with the bandwidth 1.3 GHz. The realized LNA uses the common gate topology decreasing the reflections at the input, i.e., to decrease the S 11 parameter, cascode topology is used to enhance the gain of the circuit while source follower topology is used to for the output impedance matching and transformer matching is employed to further enhance the S 22 parameter. The body biasing for the connected MOS is done through the RL circuit connected between body and drain. The realized LNA has a maximum gain value of 11.35 dB, minimum S 11 value of –22.35 dB, minimum NF value of 2.08 dB and minimum S 22 value of –10.06 dB at 6.03 GHz. The process corner simulation for the slow-slow and fast-fast corners are also done and observed that LNA parameters values are under the range. The realized LNA consumes V DD =1.8 V, with current consumption of 11.40 mA, i.e., having power consumption of 20.52 mW.