Theoretical approach examines electron-phonon coupling mechanisms in GaAs antisite defect, suggesting important implications for semiconductor physics.
We propose a theoretical approach to the general problem of phonon-coupling between localised electronic states in semiconductors, which takes advantage of results from first-principles calculations. Application of this scheme to the isolated antisite defect As(Ga) in GaAs reveals that electron-phonon coupling can provide the mechanism for the metastable transition characteristic of EL2.
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MJ et al. (1994) studied this question.
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