/Ni-Si bilayer interphase at the NiO/4H-SiC interface. The SOOG-engineered buried interphase results in an over 85% reduction in dark current, 1800% enhancement in responsivity, and ultrafast response times of 3/5 ms, nearly 2 orders of magnitude faster than untreated devices. Our findings indicate that the SOOG strategy provides an effective route for buried interphase engineering by harnessing reaction competition. This approach effectively addresses the critical issue of interfacial defects in oxide/wide-bandgap semiconductor heterojunctions, enabling next-generation photodetectors with high response speed and sensitivity. In turn, it is also applicable to broader applications in high-performance electronic and photonic devices.
Zhang et al. (Mon,) studied this question.