Randomized trial explores femtosecond laser impacts on surface machinability in wafers, suggesting effective methods for improvement.
Key Points
This research aims to understand how femtosecond laser modification affects phase transformation and microstructural changes in 4H-SiC wafers to improve machinability.
Utilized finite element method (FEM) and reactive force field molecular dynamics (ReaxFF MD) alongside experimental analysis.
Determined modification threshold of SiC at 1.91 J/cm^2, assessing critical electron density for process control.
Examined laser-induced periodic surface structures (LIPSS) manipulation by varying pulse fluence and overlap rate.
Confirmed phase separation and C-Si bond dissociation upon laser treatment; Si-O bond formation was also observed.
Revealed a two-stage modification-ablation mechanism influencing surface properties beyond the modification threshold.
Achieved controllable evolution of LIPSS and nanoparticle coatings, modulating surface stress distribution and stiffness effectively.