Three-segment lateral δ-doping redistribution in GaAs pHEMTs for gate-drain field relief and improved off-state robustness.

Shishi Liao; Jin Xu; Jian Yang; Qiuhong Xie; Qi Jiang

doi:10.1038/s41598-026-50321-8

April 29, 2026

Three-segment lateral δ-doping redistribution in GaAs pHEMTs for gate-drain field relief and improved off-state robustness.

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Key Points

The study aims to analyze the effects of three-segment lateral δ-doping redistribution on the performance and robustness of GaAs pHEMTs.
Conducted simulation-based analysis of pHEMT designs with varying lateral δ-doping distributions.
Quantified impact on operating point and performance trade-offs.
Operating point decreased by up to 11.7% with lateral δ-doping redistribution.
Findings provide a comparative basis for evaluating design configurations.

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Implication

Simulation assesses lateral doping impacts on off-state robustness in GaAs pHEMTs, suggesting performance trade-offs.

Abstract

operating point decreases by up to 11.7%. These simulation-based results quantify the robustness-performance trade-off and provide a comparative basis for evaluating lateral δ-doping redistribution within the explored design space.

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Cite This Study

Liao et al. (2026) studied this question.

synapsesocial.com/papers/69f594b171405d493afff8a1 https://doi.org/10.1038/s41598-026-50321-8

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Three-segment lateral δ-doping redistribution in GaAs pHEMTs for gate-drain field relief and improved off-state robustness.

Key Points

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Implication

Abstract

Discussion

Cite This Study

Three-segment lateral δ-doping redistribution in GaAs pHEMTs for gate-drain field relief and improved off-state robustness.

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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