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In this paper, we present a compact model for metal-oxide-based resistive random access memory (RRAM) devices with bipolar switching characteristics. The switching mechanism relies on the dynamics of conductive filament growth/dissolution in the oxide layer. Besides the dc and pulsed I-V characteristics, the model also captures the RRAM retention property and the temperature dynamics. The model parameters and the device variations are calibrated from the experimental data of IMEC HfO x -based RRAM devices. The model has been implemented in Verilog-A, which can be easily adapted into the SPICE simulator for the circuit-level analysis. As case studies, we demonstrate the model's applications on the programming scheme design of the 1-transistor-1-resistor array, as well as the design space exploration of the 1-selector-1-resistor cross-point array toward megabit-level.
Chen et al. (2015) studied this question.