Theoretical investigation shows enhanced thermoelectric properties from metal integration in phthalocyanine junctions, suggesting new material applications.
In an effort to improve the thermoelectric properties of phthalocyanine‐based molecular junctions, the current work establishes a robust mechanism by incorporating different metals (Mg, Zn, Ni, and Pt) into the cavity center of the phthalocyanine‐single junctions. The low transmission coefficient T(E) values are ranging from 3.7 × 10 −9 to 62 × 10 −9 , confirming the signature of the destructive quantum interference (DQI) and the low junction formation probability (JFP), which in turn led to the high value (−86.63 µKV −1 ) of the Seebeck coefficient (S). The high value of electronic figure of merit (ZelT) of 2.0 is opening a new window for developing thermoelectric materials and their applications. In addition, the switching from negative to positive values of S makes Pc molecules suitable candidates to extend the applications of thermoelectric materials. A threshold voltage (Vth) ranging between 0.22 and 3 V indicates the possibility of using this type of molecular junction in various electronic applications.
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Al‐Owaedi et al. (2026) studied this question.
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