Freestanding graphene exhibits exceptional mechanical flexibility and electrical conductivity, making it well suited for varying capacitance applications. For example, when suspended above a fixed electrode, graphene will move in response to an applied bias voltage, thereby forming a varactor or voltage-controlled capacitor. In this work, we present a very detailed and scalable fabrication process for building graphene-based variable capacitor device structures. Starting with commercially available 100 mm silicon wafers with a thick thermal oxide layer, we fabricate thousands of individually accessible freestanding graphene variable capacitors using standard semiconductor methods. The process begins with metal deposition to establish alignment crosshairs, then oxide etching to create trenches, a second metal deposition to form electrodes and bonding pads, followed by large-area graphene transfer, then patterning the graphene via oxygen plasma etching, critical point drying for suspension, and finally wire bonding our devices into a package. We use optical and atomic force microscopy characterization to confirm our design specifications were met. Electrical characterization confirms successful graphene suspension through voltage-dependent capacitance measurements. The procedure presented here successfully suspends both pure multilayer graphene as well as graphene with a thick layer of PMMA.
Amin et al. (2026) studied this question.