Harnessing Scanning Probe Lithography for Integrated Photonics with Anisotropic Materials

Key Points

The aim is to develop damage-free fabrication techniques for integrating high-index, wide-bandgap semiconductors into nanophotonic circuits.
Utilized scanning probe lithography to achieve integration.
Focused on the mechanical anisotropy of layered semiconductors.
Successfully demonstrated a crystallography-guided technique.
Achieved improved fabrication compatibility with layered semiconductors.

This randomized trial demonstrates the integration of anisotropic materials in nanophotonic circuits, indicating a viable fabrication technique.

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Kuznetsov et al. (2026) studied this question.

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