Ta-doped SnO 2 (Sn 0.99 Ta 0.01 O 2 ; TTO) films were successfully sputter deposited with a high mobility of 49 cm 2 V -1 s -1 on glass coated with anatase-TiO 2 seed layers. The high mobility enabled the achievement of a film resistivity of 5.9 ×10 -4 Ω cm. This value of resistivity is one of the lowest ever reported for SnO 2 -based polycrystalline films without enhanced free-carrier absorption. An optimized film with a sheet resistance of 14 Ω/□ exhibited a transmittance of more than 70%, even in the near-infrared region. These results demonstrate that sputtered TTO films obtained by the TiO 2 seed layer method are suitable for use in transparent electrodes in solar cells.
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Yamada et al. (2010) studied this question.
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