Ge ₁₄ Br ₈ (P n Pr ₃ ) ₄ : A Material for Laser-Induced Printing of Elemental Germanium

, obtained via controlled disproportionation of a metastable GeBr solution. Substitution of the phosphine ligands markedly enhances the solubility in organic solvents, enabling comprehensive spectroscopic characterization via nuclear magnetic resonance (NMR), ultraviolet-visible (UV-vis), and mass spectrometry. Furthermore, the cluster demonstrates a high Ge content of 45 wt %, rendering it a possible precursor for laser-induced writing of elemental germanium under inert conditions. To demonstrate its potential, we fabricate deliberately designed patterns of Ge microstructures and assess their semiconducting behavior. This work establishes the first example of direct laser writing of germanium from a soluble metalloid cluster precursor, opening new pathways for additive microfabrication in semiconductor technology.