Tunneling anisotropic magnetoresistance in organic spin valves

We report the observation of tunneling anisotropic magnetoresistance in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a unique high-mobility perylene diimide-based n-type organic semiconductor. The effect originates from the tunneling injection from the La0.7Sr0.3MnO₃ contact and can thus occur even for organic layers which are too thick to support the assumption of tunneling through the layer. Magnetoresistance measurements show a clear spin-valve signal, with the typical two-step switching pattern caused by the magnetocrystalline anisotropy of the epitaxial magnetic electrode.