The application of GaN on SiC technology to wideband power amplifier MMICs is explored. The unique characteristics of GaN on SiC applied to reactively matched and distributed wideband circuit topologies are discussed, including comparison to GaAs technology. A 2 - 18 GHz 11W power amplifier MMIC is presented as an example.
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Reese et al. (2010) studied this question.
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