The formation and growth of isolated domains during local switching by a biased tip of a scanning probe microscope in a (100) cut of a bismuth titanate Bi4Ti3O12 single crystal were studied experimentally. The as-grown domain structure consists of two domain types: a-type (out-of-plane) and b-type (in-plane). Local switching of the a-type domain area leads to anisotropic growth of a hexagonal a-type domain (a-a switching) with 180° walls. The dependence of the domain size on the pulse duration during domain growth along the b-axis was considered in terms of the anisotropic current-limited domain wall motion. Local switching of the b-type domain area leads to formation of a hexagonal a-type domain (b-a switching) with 90° walls increasing in size linearly with the applied voltage. The dependence of the domain size on the pulse duration was measured over a wide range of humidities. The increase in the domain size at moderate humidity is attributed to the effect of the water meniscus. The decrease in the domain size at high humidity is attributed to backswitching under the action of the residual depolarization field, facilitated by a conductive water layer on the side surfaces of the sample. The obtained results provide useful insights into the domain kinetics of ferroelectrics with C2 symmetry and can pave the way for the development of domain engineering techniques. The obtained results establish a direct relationship between local switching kinetics, crystallographic anisotropy, and environmental conditions. This provides the scientific community with a new framework for understanding domain wall motion in multiaxial ferroelectrics, which is essential for the development of stable and reliable domain-engineered devices.
Turygin et al. (Fri,) studied this question.