Investigation of X-Ray Irradiance Hardness and High Temperature Operation of H-Terminated Diamond MOSFET

In this work, we have investigated the ionizing radiation X-ray hardness of H-terminated diamond MOSFET using TCAD-based device analysis. The radiation effect is captured via the trapped charges in bulk Al2O3 and interface traps at diamond/Al2O3 interface due to the generation of electron–hole pairs (EHPs). The simulated transfer characteristics of irradiated devices are calibrated against experimental data present in the literature. We further estimated the trapped charge density in gate oxide for different radiation doses and its effect on EHPs generation rate. In addition, typical device characteristic parameters, such as <tex-math notation="LaTeX">VT </tex-math>, <tex-math notation="LaTeX">JON </tex-math>, <tex-math notation="LaTeX">JOFF </tex-math>, subthreshold swing (SS) and transconductance ( <tex-math notation="LaTeX">gₘ </tex-math>) are analyzed for various radiation doses varying from 1 kGy to 10 MGy and across temperature (300–800 K). Diamond MOSFET exhibits a very high on-to-off current ratio both at room temperature and high temperatures with high radiation doses. Our study shows that relatively smaller variations in <tex-math notation="LaTeX">gₘ </tex-math> and SS for radiation dose higher than 10 kGy lead to radiation-hardened reliable transistor performance of the H-terminated diamond MOSFET.