The mean transverse emission energy (MTEE) of electrons from GaAs photocathodes has been derived from limiting resolution measurements on proximity-focused image intensifiers. The value of 107+or-18 meV obtained for the (111)B emitting surface of GaAs/GaxAl(1-x)As/GaP photocathodes is approximately two orders higher than that calculated by other workers, and does not depend on the applied electric field in the range 1000-4000 V mm-1. In contrast to previous work a comparable value has also been measured at 2 V mm-1 using a LEED optic assembly with correction for the distortion of the trajectories of these very low-energy electrons.
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Bradley et al. (1977) studied this question.
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