As the rapid development of intelligent systems moves toward flexible electronics, capacitors with extraordinary flexibility and an outstanding energy storage performance will open up broad prospects for powering portable/wearable electronics and pulsed power applications. This work presents a simple one‐step process to fabricate a flexible Mn‐doped 0.97(0.93Na 0.5 Bi 0.5 TiO 3 ‐0.07BaTiO 3 )‐0.03BiFeO 3 (Mn:NBT‐BT‐BFO) inorganic thin film capacitor with the assistance of a 2D fluorophlogopite mica substrate. The film element, which has a high breakdown strength, great relaxor dispersion, and the coexistence of ferroelectric and antiferroelectric phases, has a high recoverable energy storage density ( W rec ≈81.9 J cm −3 ), high efficiency (η ≈64.4%), superior frequency stability (500 Hz–20 kHz), excellent antifatigue property (1 × 10 9 cycles), and a broad operating temperature window (25–200 °C). The all‐inorganic Mn:NBT‐BT‐BFO/Pt/mica capacitor has a prominent mechanical‐bending resistance without obvious deterioration in its corresponding energy storage capability when it is subjected to a bending radius of 2 mm or repeated bending for 10 3 cycles. This work is the first demonstration of an all‐inorganic flexible film capacitor and sheds light on dielectric energy storage devices for portable/wearable applications.
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Yang et al. (2019) studied this question.
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