Indium segregation in InxGa1−xAs/GaAs (0.05<x<0.25) quantum wells grown by molecular beam epitaxy has been investigated using low temperature photoluminescence. Additional features at low energy are evident in some of the spectra that are consistent with trapping of free excitons by In-rich islands at the top interface, which occurs as the result of In segregation.
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Yu et al. (1995) studied this question.