Hot‐Exciton Mechanism and AIE Effect Boost the Performance of Deep‐Red Emitters in Non‐Doped OLEDs

) states, and enhancing exciton utilization efficiency by employing suitable donor moieties. This approach reduces the aggregation-caused quenching (ACQ) in the aggregate state, resulting in the proof-of-concept emitter DT-IPD, which produces an unprecedented external quantum efficiency (EQE) of 12.2% and Commission Internationale de I'Eclairage (CIE) coordinates of (0.69, 0.30) in a deep-red non-doped OLED at 685 nm, representing the highest performance among all deep-red OLEDs based on materials with hot-exciton mechanisms. This work provides novel insights into the design of more efficient hot-exciton emitters with AIE properties.