Silicide formation and the generation of point defects in silicon

The annealing behavior of the divacancy (V₂) acceptor levels in silicon is investigated with the use of Schottky-barrier structures formed by the deposition of copper on n-type silicon irradiated with 2-MeV electrons. At temperatures below {~}150 ^∘{}C an anomalously high annealing rate of the V₂ centers is observed, and we believe that the fast-diffusing interstitial Cu⁺ passivates their electrical activity and forms neutral complexes. In the temperature range 150--200 ^∘{}C, where the metal-rich silicide {η}'-Cu₃Si forms, the concentration of V₂ remains almost constant, and we find no evidence for the injection of silicon self-interstitials during the formation of {η}'-Cu₃Si, in contrast to recent experiments.