La aluminate (La2O3)x(Al2O3)1−x films were grown by atomic layer deposition method, for which the conduction band offset, valence band offset, and band gap were obtained by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The valence band offsets were nearly unchanged within the range from 2.23to2.37eV with increasing Al content. The conduction band offsets were changed from 2.40to2.86eV for the above dielectrics. Remarkably, the band gap could be engineered from 5.75to6.35eV by increasing Al content. We also found that La aluminate films have symmetric band profiles.
No takes yet. Share an insight, caveat, or question.
Jin et al. (2008) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:
More from Applied Physics Letters