In this review article, we discuss the recent advances in the III-nitrides, in particular GaN and its ternary alloys, for photovoltaic and thermoelectric devices. The advantages of using the III-nitrides for electronic and optoelectronic applications are well understood and III-nitride devices are already seen in many consumer based products. Recently, an emerging potential of III-nitrides for energy harvesting has been investigated due to its unique materials properties that include a tunable direct band gap, mechanical and thermal stability at high temperatures and excellent electronic transport properties. This review will show that the potential of using the III-nitrides for photovoltaic and thermoelectric applications will be realized as the impact of intrinsic and extrinsic defects on the photovoltaic and thermoelectric properties are better understood.
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Lü et al. (2013) studied this question.
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