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Non-uniform switching parameters and hard breakdown caused by excessive oxygen escape are the main issues that impede the development of SiO x -based resistive-switching random-access memory (RRAM). In this letter, low-oxygen-escape Pt/Ti/Li x SiO y /Pt (Pt/Ti/LSO/Pt) resistive switching devices were studied systematically, where oxygen escape was mitigated by the application of O-reservoir Pt/Ti electrode. Compared with the Pt/Ti/SiO x /Pt devices, the Pt/Ti/LSO/Pt devices show high uniformity, low switching voltages (10 9 ) were demonstrated. These results demonstrate the possible application of low-oxygen-escape configuration for the SiO x -based RRAM development.
Zhao et al. (Tue,) studied this question.