Dielectric‐Free MoS ₂ /VO ₂ Junction Field‐Effect Transistor with Sensitive and Ultrafast Photoresponse for Light Encrypted Communication

This is the authors' abstract. We don't add key points for this paper.

Jones) and fast response speed (rise/decay time: 8/10 µs). The device exhibits self-powered photodetection at elevated temperature, a rare occurrence for phototransistors with ohmic contact, attributed to enhanced built-in electric field at asymmetric vdW heterojunction. The JFET's effective gate controllability and sensitive photoresponse make it suitable as a low-power light encoder for encrypted communication. This work provides the foundation for integrated optoelectronic devices based on 2D materials and heterostructures.