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January 1, 2022Journal of Materials Chemistry C

An Al-doped TiO₂ interfacial layer for effective hole injection characteristics of quantum-dot light-emitting diodes

Min Gye Kim Jae Seung Shin Jin Hyun Jun Hyung Jeong Dong Hee Han Beom‐Su Kim Woojin Jeon Yongsup Park Seong Jun Kang

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Abstract

Al-doped TiO 2 (ATO) interfacial layer improves the charge balance and the performance of quantum-dot light-emitting diodes (QLEDs).

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Kim et al. (2022) studied this question.

synapsesocial.com/papers/6a036b9eccb28b3f3381e890 https://doi.org/10.1039/d2tc00678b

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