In situ approach to realization of three-dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates

We report the first realization of three-dimensionally confined semiconductor heterostructures via a one-step growth on nonplanar patterned substrate. Truncated pyramidal shaped mesas on GaAs (111)B patterned substrates are employed and a substrate encoded size reducing epitaxical growth process exploited to realize GaAs pinched-off pyramidal volumes of base ∼50 nm and height 13 nm.